高电压功率晶体管 High Voltage Power Transistors
Compared to other transistors, the NPN general purpose bipolar junction transistor, developed by , can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 3 V. Its maximum power dissipation is 1560 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 3 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| MJD340RLG | ON Semiconductor 安森美 | 下载 |
| MJD3055G | ON Semiconductor 安森美 | 下载 |
| MJD3055T4 | ST Microelectronics 意法半导体 | 下载 |
| MJD3055T4G | ON Semiconductor 安森美 | 下载 |
| MJD3055TF | Fairchild 飞兆/仙童 | 下载 |
| MJD31CRLG | ON Semiconductor 安森美 | 下载 |
| MJD31CT4G | ON Semiconductor 安森美 | 下载 |
| MJD31CTF | Fairchild 飞兆/仙童 | 下载 |
| MJD32CTF | Fairchild 飞兆/仙童 | 下载 |
| MJD350G | ON Semiconductor 安森美 | 下载 |
| MJD340T4 | ST Microelectronics 意法半导体 | 下载 |