TN2106K1-G

TN2106K1-G 编带

N-Channel 60V 280mA Tj 360mW Tc Surface Mount TO-236AB SOT23

得捷:
MOSFET N-CH 60V 280MA TO236AB

欧时:
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V,

立创商城:
N沟道 60V 280mA

e络盟:
晶体管, MOSFET, N沟道, 280 mA, 60 V, 2.5 ohm, 10 V, 2 V

艾睿:
If you need to either amplify or switch between signals in your design, then Microchip Technology&s;s TN2106K1-G power MOSFET is for you. Its maximum power dissipation is 360 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

Allied Electronics:
MOSFET; N-CHANNEL ENHANCEMENT-MODE; 60V; 2.5 Ohm3 SOT-23T/R

安富利:
Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-23

TME:
Transistor: N-MOSFET; unipolar; 60V; 0.6A; 360mW; SOT23-3

Verical:
Trans MOSFET N-CH Si 60V 0.28A 3-Pin SOT-23 T/R

儒卓力:
**N-CHAN.MOSFET 60V 0,8A SOT23 **

Win Source:
MOSFET N-CH 60V 280MA SOT23-3