BFP420F

NPN硅晶体管RF NPN Silicon RF Transistor

Summary of Features:

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Low noise high gain silicon bipolar RF transistor

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Based on ´s reliable very high volume 25 GHz silicon bipolar technology

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0.9 dB minimum noise figure typical at 900 MHz, 3 V, 4 mA

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16 dB maximum gain Gma typical at 2.4 GHz, 3 V, 15 mA

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28 dBm OIP3 typical at 2.4 GHz, 4 V, 40 mA

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16.5 dBm OP1dB typical at 2.4 GHz, 4 V, 40 mA

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Popular in discrete oscillators

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Thin, small, flat, Pb-free RoHS compliant and Hal-free

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“green” package with visible leads