低噪声，匹配双PNP晶体管 Low Noise, Matched Dual PNP Transistor
GENERAL DESCRIPTION
The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics 1 nV/√Hz max @ 1 kHz, high bandwidth 190 MHz typical, and low offset voltage 100 µV max, makes the MAT03 an excellent choice for demanding preamplifier applications. Tight current gain matching 3% max mismatch and high current gain 100 min, over a wide range of collector current, makes the MAT03 an excellent choice for current mirrors. A low value of bulk resistance typically 0.3 Ω also makes the MAT03 an ideal component for applications requiring accurate logarithmic conformance.
Each transistor is individually tested to data sheet specifications. Device performance is guaranteed at 25°C and over the extended industrial and military temperature ranges. To insure the long term stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse base emitter junction potential. This prevents a base-emitter break down condition which can result in degradation of gain and matching performance due to excessive breakdown current.
FEATURES
Dual Matched PNP Transistor
Low Offset Voltage: 100 mV max
Low Noise: 1 nV/√Hz @ 1 kHz max
High Gain: 100 min
High Gain Bandwidth: 190 MHz typ
Tight Gain Matching: 3% max
Excellent Logarithmic Conformance: rBE = 0.3 Ω typ
Available in Die F