功率半导体功率模块 Power Semiconductors Power Modules
This fast-switching IGBT transistor from will be perfect in your circuit. Its maximum power dissipation is 543000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT35GP120B2DQ2G | Microsemi 美高森美 | 下载 |
| APT30GT60KRG | Microsemi 美高森美 | 下载 |
| APT30DQ60KG | Microsemi 美高森美 | 下载 |
| APT30DQ100KG | Microsemi 美高森美 | 下载 |
| APT30D60BG | Microsemi 美高森美 | 下载 |
| APT30DQ60BG | Microsemi 美高森美 | 下载 |
| APT30DQ120KG | Microsemi 美高森美 | 下载 |
| APT30DQ100BG | Microsemi 美高森美 | 下载 |
| APT30D40B | Microsemi 美高森美 | 下载 |
| APT30S20BCTG | Microsemi 美高森美 | 下载 |
| APT30S20BG | Microsemi 美高森美 | 下载 |