N沟道 增强模式 横向场效应 射频 功率晶体管
Amplifying and switching electronic signals in radio frequency environments is easy with this RF amplifier from STMicroelectronics. Its maximum power dissipation is 19500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. Its maximum frequency is 1000 MHz. This RF power MOSFET has an operating temperature range of -65 °C to 150 °C. This N channel RF power MOSFET operates in enhancement mode.
| 型号 | 品牌 | 下载 |
|---|---|---|
| PD54003L-E | ST Microelectronics 意法半导体 | 下载 |
| PD54008S-E | ST Microelectronics 意法半导体 | 下载 |
| PD54008-E | ST Microelectronics 意法半导体 | 下载 |
| PD54008L-E | ST Microelectronics 意法半导体 | 下载 |
| PD54008TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD54003-E | ST Microelectronics 意法半导体 | 下载 |
| PD54008 | ST Microelectronics 意法半导体 | 下载 |
| PD54003S-E | ST Microelectronics 意法半导体 | 下载 |
| PD54R-223K | API Delevan | 下载 |
| PD54003L | ST Microelectronics 意法半导体 | 下载 |
| PD54008L | ST Microelectronics 意法半导体 | 下载 |