MUN5215T1G

ON SEMICONDUCTOR  MUN5215T1G  晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, SOT-323

通用 NPN ，最大 1A，On Semiconductor

### 标准

带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。

得捷:
TRANS PREBIAS NPN 50V SC70-3

欧时:
ON Semiconductor, MUN5215T1G

立创商城:
NPN 双极数字晶体管 BRT

e络盟:
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm

艾睿:
Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT&s;s within? Look no further than the NPN MUN5215T1G digital transistor from ON Semiconductor. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 160@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 310 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

Allied Electronics:
ON Semi MUN5215T1G NPN Bipolar Transistor, 0.1 A, 50 V, 3-Pin SC-70

安富利:
Trans Digital BJT NPN 50V 100mA 3-Pin SC-70 T/R

Chip1Stop:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SC-70 T/R

Verical:
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R

Newark:
# ON SEMICONDUCTOR  MUN5215T1G  Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 10 kohm, SOT-323

Win Source:
TRANS PREBIAS NPN 202MW SC70-3