BUV21数据手册PDF_BUV21中文资料-锐单商城

BUV21概述

SITCHMODE系列NPN硅功率晶体管 SITCHMODE Series NPN Silicon Power Transistor

SWITCHMODE™ Series NPN Silicon Power Transistor

This device is designed for high speed, high current, high power applications.

Features

• High DC Current Gain:

hFE min = 20 at IC = 12 A

• Low VCEsat, VCEsat

max = 0.6 V at IC = 8 A

• Very Fast Switching Times:

TF max = 0.4 μs at IC = 25 A

• These are Pb−Free Devices

艾睿:
Trans GP BJT NPN 200V 40A 3-Pin2+Tab TO-204 Tray

BUV21数据文档