NXP BFG21W,115. 射频宽带晶体管, NPN, 4.5V, 18GHZ, 4-SOT-343R
The is an NPN Double Polysilicon Bipolar Power Transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. This UHF power transistor is suitable for linear and non-linear operations.