IXYS SEMICONDUCTOR IXTM24N50 晶体管, MOSFET, N沟道, 24 A, 500 V, 230 mohm, 10 V, 4 V
N-Channel Enhancement Mode
Features
International standard packages
Low RDS onHDMOS™ process
Rugged polysilicon gate cell structure
Low package inductance < 5 nH
\- easy to drive and to protect
Fast switching times
Applications
Switch-mode and resonant-mode power supplies
Motor controls
Uninterruptible Power Supplies UPS
DC choppers
e络盟:
功率场效应管, MOSFET, N沟道, 500 V, 24 A, 0.23 ohm, TO-204AA, 通孔
艾睿:
Trans MOSFET N-CH 500V 24A 3-Pin2+Tab TO-204AE
Verical:
Trans MOSFET N-CH 500V 24A 3-Pin2+Tab TO-204AE