功率半导体功率模块 Power Semiconductors Power Modules
You won"t need to worry about any lagging in your circuit with this IGBT transistor from . Its maximum power dissipation is 250000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
型号 | 品牌 | 下载 |
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APT30GT60BRG | Microsemi 美高森美 | 下载 |
APT30GT60KRG | Microsemi 美高森美 | 下载 |
APT30DQ60KG | Microsemi 美高森美 | 下载 |
APT30DQ100KG | Microsemi 美高森美 | 下载 |
APT30D60BG | Microsemi 美高森美 | 下载 |
APT30DQ60BG | Microsemi 美高森美 | 下载 |
APT30DQ120KG | Microsemi 美高森美 | 下载 |
APT30DQ100BG | Microsemi 美高森美 | 下载 |
APT30D40B | Microsemi 美高森美 | 下载 |
APT30S20BCTG | Microsemi 美高森美 | 下载 |
APT30S20BG | Microsemi 美高森美 | 下载 |