N沟道 200V 7A
These N-Channel enhancement mode power field effect transistors are produced using "s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control.
Product Highlights
7A, 200V, R
DSon
= 0.4
W
@V
GS
= 10 V
Low gate charge typical 19 nC
Low Crss typical 35 pF
Fast switching
100% avalanche tested
Improved dv/dt capability
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|---|---|---|
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| FQD6N50CTM | Fairchild 飞兆/仙童 | 下载 |
| FQD6P25TM | Fairchild 飞兆/仙童 | 下载 |
| FQD6N40CTF | Fairchild 飞兆/仙童 | 下载 |
| FQD6N40TM | Fairchild 飞兆/仙童 | 下载 |
| FQD6N60CTF | Fairchild 飞兆/仙童 | 下载 |
| FQD630TF | Fairchild 飞兆/仙童 | 下载 |
| FQD6N60CTM | Fairchild 飞兆/仙童 | 下载 |
| FQD6N50CTM_F080 | Fairchild 飞兆/仙童 | 下载 |