BF2040E6814HTSA1

Infineon Si N沟道 MOSFET 四极管 BF2040E6814HTSA1, 40 mA, Vds=8 V, 4引脚 SOT-143封装

双栅极 MOSFET 四极管

Infineon 双栅极低噪声四极管 MOSFET 射频

得捷:
RF MOSFET N-CH 5V SOT143-4

立创商城:
BF2040E6814HTSA1

欧时:
Infineon Si N沟道 MOSFET 四极管 BF2040E6814HTSA1, 40 mA, Vds=8 V, 4引脚 SOT-143封装

贸泽:
射频金属氧化物半导体场效应RF MOSFET晶体管 Silicon N-Channel MOSFET Tetrode 5V

e络盟:
晶体管, 射频FET, 8 V, 40 mA, 200 mW, SOT-143

艾睿:
Need a MOSFET that will work in radio frequency environments? This BF2040E6814HTSA1 RF amplifier made from Infineon Technologies is perfect for switching and amplifying electronic signals. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. Its maximum frequency is 1000 MHz. This RF power MOSFET has an operating temperature range of -55 °C to 150 °C. This N channel RF power MOSFET operates in depletion mode.

TME:
Transistor: N-MOSFET; unipolar; RF; 8V; 40mA; 200mW; SOT143; SMT

Verical:
Trans RF MOSFET N-CH 8V 0.04A Automotive 4-Pin3+Tab SOT-143 T/R

Win Source:
RF MOSFET N-CH 5V SOT143-4 / RF Mosfet N-Channel 5 V 15 mA 800MHz 23dB PG-SOT-143-3D