SI3900DV-T1-E3数据手册PDF_SI3900DV-T1-E3中文资料-锐单商城

SI3900DV-T1-E3概述

VISHAY SI3900DV-T1-E3 双路场效应管, MOSFET, 双N沟道, 2 A, 20 V, 0.125 ohm, 4.5 V, 600 mV

The is a dual N-channel MOSFET housed in a surface-mount package.

贸泽:
MOSFET TSOP6 20V DUAL N-CH D-S TREN

e络盟:
VISHAY SI3900DV-T1-E3 双路场效应管, MOSFET, 双N沟道, 2 A, 20 V, 0.125 ohm, 4.5 V, 600 mV

艾睿:
Trans MOSFET N-CH 20V 2A 6-Pin TSOP T/R

安富利:
Trans MOSFET N-CH 20V 2A 6-Pin TSOP T/R

富昌:
双 N 沟道 20 V 0.125 Ohms 表面贴装功率 Mosfet - TSOP-6

Verical:
Trans MOSFET N-CH 20V 2A 6-Pin TSOP T/R

Newark:
# VISHAY SI3900DV-T1-E3 Dual MOSFET, Dual N Channel, 2 A, 20 V, 0.125 ohm, 4.5 V, 600 mV

SI3900DV-T1-E3数据文档