RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
This RF amplifier from STMicroelectronics is a semiconductor-based transistor that amplifies or switches electronic signals and electrical power in a circuit. Its maximum power dissipation is 79000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| PD85025S-E | ST Microelectronics 意法半导体 | 下载 |
| PD85035-E | ST Microelectronics 意法半导体 | 下载 |
| PD85004 | ST Microelectronics 意法半导体 | 下载 |
| PD85006L-E | ST Microelectronics 意法半导体 | 下载 |
| PD85006TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85015STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85015TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85035STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85025STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85025TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD85025-E | ST Microelectronics 意法半导体 | 下载 |