VISHAY TSHF5210 红外发射器, 高速, 10 °, T-1 3/4 5mm, 100 mA, 1.4 V, 30 ns, 30 ns
The is a 890nm Infrared Emitting Diode in GaAlAs double hetero DH technology. It is moulded in a clear, untinted plastic package. It is suitable for infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements.