PHN210T,118

NXP  PHN210T,118  双路场效应管, MOSFET, 双N沟道, 2.2 A, 30 V, 0.08 ohm, 10 V, 2 V

The is an intermediate level N-channel enhancement-mode FET in a plastic package using vertical TrenchMOS technology. It is designed and qualified for use in computing, DC-to-DC converters, logic level translators, motor and relay driver applications.

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Suitable for high frequency applications due to fast switching characteristics

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Suitable for logic level gate drive sources

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Suitable for low gate drive sources