IXTT48P20P

IXTT48P20P概述

Trans MOSFET P-CH 200V 48A 3Pin2+Tab TO-268

P-Channel 200V 48A Tc 462W Tc Surface Mount TO-268


得捷:
MOSFET P-CH 200V 48A TO268


贸泽:
MOSFET -48.0 Amps -200V 0.085 Rds


艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IXTT48P20P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 462000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes polarp technology. This P channel MOSFET transistor operates in enhancement mode.


富昌:
IXTT 系列 单 N 沟道 200 V 58 mOhm 462 W 功率 Mosfet - TO-268


Verical:
Trans MOSFET P-CH 200V 48A 3-Pin2+Tab TO-268


DeviceMart:
MOSFET P-CH 200V 48A TO-268


Win Source:
MOSFET P-CH 200V 48A TO-268


IXTT48P20P数据文档
型号 品牌 下载
IXTT48P20P

IXYS Semiconductor

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IXTT1N100

IXYS Semiconductor

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IXTT28N50Q

IXYS Semiconductor

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IXTT24N50Q

IXYS Semiconductor

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IXTT50N30

IXYS Semiconductor

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IXTT40N50L2

IXYS Semiconductor

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IXTT12N140

IXYS Semiconductor

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IXTT30N50L2

IXYS Semiconductor

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IXTT30N60L2

IXYS Semiconductor

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IXTT36P10

IXYS Semiconductor

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IXTT88N15

IXYS Semiconductor

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