Trans Darlington NPN 60V 4A 50000mW 3Pin2+Tab TO-66 Sleeve
The NPN Darlington transistor from is the perfect solution when amplified current gain values are needed. This product"s maximum continuous DC collector current is 4 A, while its minimum DC current gain is 100@4A@3 V|750@2A@3V. It has a maximum collector emitter saturation voltage of 2@8mA@2A|3@40mA@4A V. This Darlington transistor array"s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@40mA@4A V. Its maximum power dissipation is 50000 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 200 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| 2N6294 TIN/LEAD | Central Semiconductor | 下载 |
| 2N6299 | Microsemi 美高森美 | 下载 |
| 2N6284G | ON Semiconductor 安森美 | 下载 |
| 2N6292G | ON Semiconductor 安森美 | 下载 |
| 2N6288G | ON Semiconductor 安森美 | 下载 |
| 2N6287G | ON Semiconductor 安森美 | 下载 |
| 2N6287 | ST Microelectronics 意法半导体 | 下载 |
| 2N6284 | ST Microelectronics 意法半导体 | 下载 |
| 2N6294 | Central Semiconductor | 下载 |
| 2N6295 | Central Semiconductor | 下载 |
| 2N6297 | Central Semiconductor | 下载 |