半桥 IGBT MOSFET 灌:290mA 拉:430mA
半桥 栅极驱动器 IC 非反相 8-SO
立创商城:
半桥 IGBT MOSFET 灌:290mA 拉:430mA
得捷:
IC GATE DRVR HALF-BRIDGE 8SO
艾睿:
Use the L6395DTR power driver from STMicroelectronics to turn on and off your high-power transistors! This device has a maximum propagation delay time of 200 ns and a maximum power dissipation of 800 mW. Its maximum power dissipation is 800 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device has a minimum operating supply voltage of 10 V and a maximum of 20 V. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C.
安富利:
MOSFET DRVR 0.43A 2-OUT Hi/Lo Side Non-Inv 8-Pin SO T/R
富昌:
L6395D N-Channel 10 - 20 Vs 600 Vout 800kHz High / Low Side Driver - SOIC-8
Chip1Stop:
Driver 600V 0.43A 2-OUT Hi/Lo Side Non-Inv 8-Pin SO N T/R
Verical:
Driver 600V 0.43A 2-OUT High and Low Side Non-Inv 8-Pin SO N T/R
儒卓力:
**HaBr MOSvIGBTDr 600V SO-8 SMD **
型号 | 品牌 | 下载 |
---|---|---|
L6395DTR | ST Microelectronics 意法半导体 | 下载 |
L6398DTR | ST Microelectronics 意法半导体 | 下载 |
L6398D | ST Microelectronics 意法半导体 | 下载 |
L6395D | ST Microelectronics 意法半导体 | 下载 |
L6393D | ST Microelectronics 意法半导体 | 下载 |
L6390DTR | ST Microelectronics 意法半导体 | 下载 |
L6392DTR | ST Microelectronics 意法半导体 | 下载 |
L6391D | ST Microelectronics 意法半导体 | 下载 |
L6392D | ST Microelectronics 意法半导体 | 下载 |
L6391DTR | ST Microelectronics 意法半导体 | 下载 |
L6393DTR | ST Microelectronics 意法半导体 | 下载 |