射频金属氧化物半导体场效应RF MOSFET晶体管 75W 860MHZ LDMOS NI360L
RF Power Field Effect Transistors
N- Channel Enhancement- Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source amplifier applications in 28/32 volt transmitter equipment.
• Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power ó 75 Watts
Power Gain ó 18.2 dB
Efficiency ó 60%
• Capable of Handling 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW Output Power
Features
• Integrated ESD Protection
• Excellent Thermal Stability
• Characterized with Series Equivalent Large- Signal Impedance Parameters
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.