BSC16DN25NS3GATMA1

BSC16DN25NS3GATMA1概述

INFINEON  BSC16DN25NS3GATMA1  晶体管, MOSFET, N沟道, 10.9 A, 250 V, 0.146 ohm, 10 V, 3 V

The BSC16DN25NS3 G is a N-channel Power MOSFET produce based on OptiMOS™ leading benchmark technology. It is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies UPS and inverters.

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Industry"s lowest RDS ON
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Lowest Qg and Qgd
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World"s lowest FOM and MSL 1 rated
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Highest efficiency
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Highest Power density
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Lowest board space consumption
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Minimal device paralleling required
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Environmentally friendly
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Easy-to-design-in products
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Qualified according to JEDEC for target application
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Halogen-free, Green device
BSC16DN25NS3GATMA1数据文档
型号 品牌 下载
BSC16DN25NS3GATMA1

Infineon 英飞凌

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BSC120N03MSGATMA1

Infineon 英飞凌

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BSC100N03MSGATMA1

Infineon 英飞凌

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BSC110N06NS3GATMA1

Infineon 英飞凌

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BSC150N03LDGATMA1

Infineon 英飞凌

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BSC12DN20NS3GATMA1

Infineon 英飞凌

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BSC160N10NS3GATMA1

Infineon 英飞凌

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BSC130P03LSGAUMA1

Infineon 英飞凌

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BSC190N12NS3GATMA1

Infineon 英飞凌

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BSC16DN25NS3 G

Infineon 英飞凌

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BSC190N15NS3 G

Infineon 英飞凌

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