射频功率晶体管HF / VHF / UHF N沟道MOSFET RF power transistors HF/VHF/UHF N-channel MOSFETs
This RF amplifier from STMicroelectronics works in radio frequency environments and can be used to amplify and switch between electronic signals. Its maximum power dissipation is 389000 mW. This component comes in tray packaging, useful for fast picking and placing of your parts. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 230 MHz.
| 型号 | 品牌 | 下载 |
|---|---|---|
| SD2931-11 | ST Microelectronics 意法半导体 | 下载 |
| SD2931-10W | ST Microelectronics 意法半导体 | 下载 |
| SD2931-11W | ST Microelectronics 意法半导体 | 下载 |
| SD2932BW | ST Microelectronics 意法半导体 | 下载 |
| SD2932W | ST Microelectronics 意法半导体 | 下载 |
| SD2942W | ST Microelectronics 意法半导体 | 下载 |
| SD2931-12MR | ST Microelectronics 意法半导体 | 下载 |
| SD2943W | ST Microelectronics 意法半导体 | 下载 |
| SD2932 | ST Microelectronics 意法半导体 | 下载 |
| SD2918 | ST Microelectronics 意法半导体 | 下载 |
| SD2931-12W | ST Microelectronics 意法半导体 | 下载 |