Trans IGBT Chip N-CH 600V 26A 130000mW 3Pin3+Tab TO-220AB Tube
Summary of Features:
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Lowest V cesat drop for lower conduction losses
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Low switching losses
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Easy parallel switching capability due to positive temperature coefficient in V cesat
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Very soft, fast recovery anti-parallel Emitter Controlled Diode
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High ruggedness, temperature stable behavior
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Low EMI emissions
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Low gate charge
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Very tight parameter distribution
Benefits:
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Highest efficiency – low conduction and switching losses
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Comprehensive portfolio in 600V and 1200V for flexibility of design
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High device reliability