NXP BFG425W,115 晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 135 mW, 25 mA, 80 hFE
The is a NPN double polysilicon Wideband Transistor with buried layer for low voltage applications in a plastic, dual-emitter package. It is designed for use with RF front end, analogue and digital cellular telephones, cordless telephones PHS, DECT, radar detectors, pagers, SATV tuners and high frequency oscillator applications.
型号 | 品牌 | 下载 |
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BFG425W,115 | NXP 恩智浦 | 下载 |
BFG480W,135 | NXP 恩智浦 | 下载 |
BFG410W,115 | NXP 恩智浦 | 下载 |
BFG425W,135 | NXP 恩智浦 | 下载 |
BFG410W,135 | NXP 恩智浦 | 下载 |
BFG424W,115 | NXP 恩智浦 | 下载 |
BFG480W,115 | NXP 恩智浦 | 下载 |
BFG424F,115 | NXP 恩智浦 | 下载 |
BFG403W,115 | NXP 恩智浦 | 下载 |
BFG403W | NXP 恩智浦 | 下载 |
BFG480W | NXP 恩智浦 | 下载 |