CSD75301W1015

TEXAS INSTRUMENTS  CSD75301W1015  双路场效应管, MOSFET, 双P沟道, -1.2 A, -20 V, 80 mohm, -4.5 V, -700 mV

The is a NexFET™ dual P-channel Power MOSFET designed to deliver the lowest ON-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. It is suitable for use with load switch, battery protection and management applications.

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Common source configuration

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Small footprint

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Ultra Low Qg and Qgd

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Halogen-free