STGW15S120DF3

STMICROELECTRONICS  STGW15S120DF3  晶体管, IGBT, TO247

IGBT 分立，STMicroelectronics

得捷:
IGBT 1200V 15A TO247

欧时:
STMicroelectronics STGW15S120DF3 N沟道 IGBT, Vce=1200 V, 30 A, 3引脚 TO-247封装

e络盟:
单晶体管, IGBT, 30 A, 1.55 V, 259 W, 1.2 kV, TO-247, 3 引脚

艾睿:
You won&s;t need to worry about any lagging in your circuit with this STGW15S120DF3 IGBT transistor from STMicroelectronics. Its maximum power dissipation is 259000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with field stop|trench technology. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

安富利:
IGBT & POWER BIPOLAR

Verical:
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin3+Tab TO-247 Tube