Trans IGBT Chip N-CH 1200V 50A 250000mW 3Pin3+Tab TO-247AD
The IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 250000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
艾睿:
Trans IGBT Chip N-CH 1200V 50A 250000mW 3-Pin3+Tab TO-247AD
Verical:
Trans IGBT Chip N-CH 1200V 50A 250000mW 3-Pin3+Tab TO-247AD
| 型号 | 品牌 | 下载 |
|---|---|---|
| IXGH28N120B | IXYS Semiconductor | 下载 |
| IXGH10N100AU1 | IXYS Semiconductor | 下载 |
| IXGH24N60B | IXYS Semiconductor | 下载 |
| IXGH30N60BD1 | IXYS Semiconductor | 下载 |
| IXGH24N60C | IXYS Semiconductor | 下载 |
| IXGH32N60C | IXYS Semiconductor | 下载 |
| IXGH32N60CD1 | IXYS Semiconductor | 下载 |
| IXGH50N60B | IXYS Semiconductor | 下载 |
| IXGH32N60B | IXYS Semiconductor | 下载 |
| IXGH24N60A | IXYS Semiconductor | 下载 |
| IXGH32N60BU1 | IXYS Semiconductor | 下载 |