TMS28F800AZT

1 048 576 x 8 位和 524 288 x 16 位自动选择引导块闪存

* Organization... 1048576 By 8 Bits

524288 By 16 Bits

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Array-Blocking Architecture

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Two 8K-Byte/4K-Word Parameter Blocks

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One 96K-Byte/48K-Word Main Block

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Seven 128K-Byte/64K-Word Main Blocks

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One 16K-Byte/8K-Word Protected Boot Block

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Top or Bottom Boot Locations

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All Inputs/Outputs TTL-Compatible

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Maximum Access/Minimum Cycle Time

5-V VCC 3-V VCC

"28F008Axy70 70 ns 100 ns

"28F008Axy80 80 ns 120 ns

"28F800Axy70 70 ns 100 ns

"28F800Axy80 80 ns 120 ns

See Table 1 for VCC/VPP Voltage Configuration

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100000- and 10000-Program/Erase Cycle Versions

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Three Temperature Ranges

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Commercial...0°C to 70°C

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Extended...- 40°C to 85°C

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Automotive...- 40°C to 125°C

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Embedded Program/Erase Algorithms

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Automated Byte Programming

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Automated Word Programming

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Automated Block Erase

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Erase Suspend/Erase Resume

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Automatic Power-Saving Mode

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JEDEC Standards Compatible

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Compatible With JEDEC Byte/Word Pinouts

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Compatible With JEDEC EEPROM Command Set

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Fully Automated On-Chip Erase and Byte/Word Program Operations

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Package Options

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44-Pin Plastic Small-Outline Package PSOP DBJ Suffix

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40-Pin Thin Small-Outline Package TSOP DCD Suffix

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48-Pin TSOP DCD Suffix

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48-Ball Micro Ball Grid Array

uBGATM available

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Low Power Dissipation VCC = 5.5 V

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Active Write...330 mW Byte Write

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Active Read...220 mW Byte Read

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Active Write...330 mW Word Write

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Active Read...275 mW Word Read

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Block Erase...330 mW

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Standby...0.55 mW CMOS-Input Levels

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Deep Power-Down Mode...0.044 mW

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Write-Protection for Boot Block

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Industry Standard Command-State Machine CSM

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Erase Suspend/Resume

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Algorithm-Selection Identifier

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Flexible VPP/Supply Voltage Combination

uBGA is a trademark of Tessera, Inc.

## description

The TMS28F800Axy is a 8388608-bit, boot-block flash memory that can be electrically block-erased and reprogrammed. The TMS28F800Axy is organized in a blocked architecture consisting of:

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One 16K-byte/8K-word protected boot block

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Two 8K-byte/4K-word parameter blocks

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One 96K-byte/48K-word main block

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Seven 128K-byte/64K-word main blocks

The device can be ordered in four different voltage configurations see Table 1. Operation as a 1024K-byte 8-bit or a 512K-word 16-bit organization is user-definable.

Embedded program and block-erase functions are fully automated by the on-chip write-state machine WSM, simplifying these operations and relieving the system microcontroller of these secondary tasks. WSM status can be monitored by an on-chip status register to determine progress of program/erase tasks. The device features user-selectable block erasure.

The TMS28F800AEy configuration allows the user to perform memory reads using 2.7-3.6-V VCC and 5-V VCC for optimum power consumption. Erasing or programming the device can be accomplished with VPP = 3 V,

5 V, or 12-V. This configuration is offered in the commercial temperature range 0°C to 70°C and the extended temperature range -40°C to 85°C. Also, TMS28F800ASy offers VCC = 3 - 3.6 V and VCC = 5 V for optimum power consumption. The TMS28F800ALy configuration allows performance of memory reads using

VCC = 3.0 - 3.6 V for optimum power consumption. The TMS28F800AVy configuration allows performance of memory reads using VCC = 2.7-3.6 V for optimum power consumption.

The TMS28F800AZy configuration offers a 5-V memory read with a 3-V/5-V/12-V program and erase. This configuration is offered in three temperature ranges: 0°C to 70°C, - 40°C to 85°C, - 40°C to 125°C.

The TMS28F800Axy is offered in a 44-pin plastic small-outline package PSOP and a 48-pin thin small-outline package TSOP organized as 16-bit or 8-bit.

The TMS28F008 is functionally equivalent to the "F800 except that it is organized only as a 8-bit configuration, and it is offered only in a 40-pin TSOP.