高电流晶体管 High Current Transistors
Use this versatile NPN GP BJT from to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| BC637G | ON Semiconductor 安森美 | 下载 |
| BC638TA | Fairchild 飞兆/仙童 | 下载 |
| BC636TAR | Fairchild 飞兆/仙童 | 下载 |
| BC636TA | Fairchild 飞兆/仙童 | 下载 |
| BC63916_D74Z | Fairchild 飞兆/仙童 | 下载 |
| BC639-10-AP | Micro Commercial Components 美微科 | 下载 |
| BC637RL1G | ON Semiconductor 安森美 | 下载 |
| BC63916_D27Z | Fairchild 飞兆/仙童 | 下载 |
| BC639-16ZL1G | ON Semiconductor 安森美 | 下载 |
| BC636BU | Fairchild 飞兆/仙童 | 下载 |
| BC639_D75Z | Fairchild 飞兆/仙童 | 下载 |