ECH8102-TL-H

ECH PNP 30V 12A

- 双极 BJT - 单 PNP 140MHz 表面贴装型 8-ECH

立创商城:
ECH8102-TL-H

得捷:
TRANS PNP 30V 12A ECH8

艾睿:
Do you require a transistor in your circuit operating in the high-voltage range? This PNP ECH8102-TL-H general purpose bipolar junction transistor, developed by ON Semiconductor, is your solution. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1600 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans GP BJT PNP 30V 12A 8-Pin ECH T/R

Verical:
Trans GP BJT PNP 30V 12A 1600mW 8-Pin ECH T/R