FDC2512

FAIRCHILD SEMICONDUCTOR  FDC2512  晶体管, MOSFET, N沟道, 1.4 A, 150 V, 425 mohm, 10 V, 2.6 V

The is a N-channel MOSFET produced using Semiconductor"s PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed.

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High performance Trench technology for extremely low RDS ON

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High power and current handling capability

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Fast switching speed

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8nC Typical low gate charge