FS800R07A2E3_B31

IGBT模块

Summary of Features:

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Increased blocking voltage capability to 680V

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High Current Density

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Low inductive design

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Low Switching Losses

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Trench IGBT 3

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Tvj op = 175°C max 10 sec

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Tvj op = 150°C continuously

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Current rating up to 800A

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VCEsat improved by 100mV compared to standard HP2

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2.5 kV AC 1min Insulation

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Direct Cooled Base Plate

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High Power Density

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Integrated NTC temperature sensor

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Isolated Base Plate

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Copper Base Plate

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RoHS compilant

Benefits:

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Cost efficient system approach

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High efficiency due to low power losses

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High reliability

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Compact design

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HybridKIT 2 Enhanced reference design available

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Very High Power Density