高压快速开关NPN功率晶体管 High voltage fast-switching NPN power transistor
If your circuit"s specifications require a device that can handle high levels of voltage, STMicroelectronics" NPN general purpose bipolar junction transistor is for you. This bipolar junction transistor"s maximum emitter base voltage is 9 V. Its maximum power dissipation is 20000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V.
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