FF50R12RT4HOSA1

晶体管, IGBT阵列&模块, N沟道, 50 A, 1.85 V, 285 W, 1.2 kV, Module

Summary of Features:

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Extended Operation Temperature T vj op

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Low Switching Losses

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Low V CEsat

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T vj op = 150°C

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V CEsat with positive Temperature Coefficient

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Isolated Base Plate

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Standard Housing

Benefits:

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Flexibility

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Optimal electrical performance

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Highest reliability