The reverse conducting TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and a monolithically integrated diode
Summary of Features:
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Monolithical diode included
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Optimized V CEsat and V F for low conduction losses
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Smooth switching performance leading to low EMI levels
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Very tight parameter distribution
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Operating range of 1 to 20kHz
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Maximum junction temperature 175°C
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Short circuit capability of 5μs
Target Applications: