BSC014NE2LSIATMA1

N-Channel 25 V 1.4 mOhm OptiMOS橮ower-MOSFET - PG-TDSON-8

OptiMOS™ 功率 MOSFET 系列

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

N 通道 - 增强模式

符合汽车 AEC Q101 规格

MSL1 高达 260°C 峰值回流焊接

175°C 工作温度

绿色封装（无铅）

超低 Rdson

欧时:
Infineon MOSFET BSC014NE2LSI

得捷:
MOSFET N-CH 25V 33A/100A TDSON

立创商城:
N沟道 25V 100A 33A

贸泽:
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS

艾睿:
As an alternative to traditional transistors, the BSC014NE2LSIATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

Chip1Stop:
Trans MOSFET N-CH 25V 33A 8-Pin TDSON EP

TME:
Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 25V 33A 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC014NE2LSIATMA1  MOSFET Transistor, N Channel, 100 A, 25 V, 0.0012 ohm, 10 V, 2 V