N沟道逻辑电平的PowerTrench MOSFET N-Channel Logic Level PowerTrench MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDSON specifications resulting in DC/DC power supply designs with higher overall efficiency.
Features
· 100 A, 30 V RDSON = 4.5 mW @ VGS = 10 V
RDSON = 6.0 mW @ VGS = 4.5 V
· Critical DC electrical parameters specified at elevated temperature
· High performance trench technology for extremely low RDSON
· 175°C maximum junction temperature rating