IXFN100N50P

IXYS SEMICONDUCTOR  IXFN100N50P  晶体管, MOSFET, 极性FET, N沟道, 100 A, 500 V, 49 mohm, 10 V, 5 V

底座安装 N 通道 500 V 90A（Tc） 1040W（Tc） SOT-227B

得捷:
MOSFET N-CH 500V 90A SOT-227B

贸泽:
MOSFET 500V 100A

艾睿:
Compared to traditional transistors, IXFN100N50P power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1040000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology.

TME:
Module; single transistor; Uds:500V; Id:75A; SOT227B; 1.04kW

Verical:
Trans MOSFET N-CH 500V 90A 4-Pin SOT-227B

Newark:
# IXYS SEMICONDUCTOR  IXFN100N50P  MOSFET Transistor, PolarFET, N Channel, 90 A, 500 V, 49 mohm, 10 V, 5 V

Win Source:
MOSFET N-CH 500V 90A SOT-227B