CY62128ELL-45ZXI

CYPRESS SEMICONDUCTOR  CY62128ELL-45ZXI  芯片, SRAM, 1Mb, 128KX8, 5V, TSOP32

The is a 1MB high performance CMOS Static Random Access Memory SRAM organized as 128K words by 8-bit. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ MoBL® in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected. The eight input and output pins are placed in a high impedance state when the device is deselected, the outputs are disabled or a write operation is in progress. To write to the device, take chip enable and write enable inputs LOW. To read from the device, take chip enable and output enable LOW while forcing write enable HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the I/O pins.

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Very high speed - 45ns

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Pin compatible with CY62128B

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Ultralow standby power

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Ultralow active power

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Easy memory expansion with CE1, CE2 and OE

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Automatic power down when deselected

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CMOS for optimum speed/power