IPP06CN10LGXKSA1

IPP06CN10LGXKSA1概述

TO-220 N-CH 100V 100A

通孔 N 通道 100A(Tc) 214W(Tc) PG-TO220-3


得捷:
MOSFET N-CH 100V 100A TO220-3


艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The IPP06CN10LGXKSA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 214000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology.


Chip1Stop:
Trans MOSFET N-CH 100V 100A 3-Pin3+Tab TO-220


IPP06CN10LGXKSA1数据文档
型号 品牌 下载
IPP06CN10LGXKSA1

Infineon 英飞凌

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IPP08CN10N

Infineon 英飞凌

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IPP024N06N3G

Infineon 英飞凌

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IPP055N03LGXKSA1

Infineon 英飞凌

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IPP041N04NGXKSA1

Infineon 英飞凌

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IPP057N06N3GHKSA1

Infineon 英飞凌

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IPP084N06L3GHKSA1

Infineon 英飞凌

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IPP034N03LGXKSA1

Infineon 英飞凌

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IPP040N06N3GHKSA1

Infineon 英飞凌

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IPP086N10N3GHKSA1

Infineon 英飞凌

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IPP037N06L3GXKSA1

Infineon 英飞凌

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