BQ2205LY

BQ2205LY概述

用于双 SRAM 内存组的电池备份监控器

The CMOS bq2205 SRAM non-volatile controller with reset provides all the necessary functions for converting one or two banks of standard CMOS SRAM into non-volatile read/write memory.

A precision comparator monitors the 3.3-V VCC input for an out-of-tolerance condition. When out-of-tolerance is detected, the two conditioned chip-enable outputs are forced inactive to write-protect both banks of SRAM.

Power for the external SRAMs, VOUT, is switched from the VCC supply to the battery-backup supply as VCC decays. On a subsequent power-up, the VOUT supply is automatically switched from the backup supply to the VCC supply. The external SRAMs are write-protected until a power-valid condition exists. The reset output provides power-fail and power-on resets for the system. During power-valid operation, the input decoder, A, selects one of two banks of SRAM.

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Power Monitoring and Switching for Non-Volatile Control of SRAMs
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Input Decoder Allows Control of 1 or 2 Banks of SRAM
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Write-Protect Control
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3-V Primary Cell Input
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3.3-V Operation
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Reset Output for System Power-On Reset
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Less than 20-ns Chip Enable Propagation Delay
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Small 16-Lead TSSOP Package
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APPLICA ONS
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NVSRAM Modules
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Point-of-Sale Systems
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Facsimile, Printers and Photocopiers
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Internet Appliances
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Servers
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Medical Instrumentation and Industrial Products
BQ2205LY数据文档
型号 品牌 下载
BQ2205LY

TI 德州仪器

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BQ2205LYPW

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BQ2205LYPWRG4

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BQ2205LYPWG4

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BQ2201SN

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BQ2201PN

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BQ2201SN-N

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BQ2201SNTR

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BQ2205LYPWR

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BQ2201SN-NTR

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BQ2201PNE4

TI 德州仪器

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