NSB1706DMW5T1G

NSB1706DMW5T1G概述

NSB 系列 50 V 100 mA 4.7 kOhm NPN 双 偏置电阻晶体管 - SC-88A

通用 NPN ,最大 1A,On Semiconductor

### 标准

带 S 或 NSV 前缀的制造商部件号具有汽车资格,符合 AEC-Q101 标准。


得捷:
TRANS 2NPN PREBIAS 0.25W SC70


欧时:
ON Semiconductor NSB1706DMW5T1G, 双 NPN 晶体管, 100 mA, Vce=50 V, HFE:80, 5引脚 SOT-353 SC-88A封装


立创商城:
NSB1706DMW5T1G


e络盟:
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率


艾睿:
Apply the applications of a traditional bi polar junction transistor, in digital circuits with this npn and PNP NSB1706DMW5T1G digital transistor from ON Semiconductor, ideal for any digital signal processing circuit! This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual common emitter configuration.


Chip1Stop:
Trans Digital BJT NPN/PNP 50V 100mA Automotive 5-Pin SC-70 T/R


Verical:
Trans Digital BJT NPN/PNP 50V 100mA Automotive 5-Pin SC-70 T/R


Newark:
# ON SEMICONDUCTOR  NSB1706DMW5T1G  Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 Ratio, SOT-353


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NSB1706DMW5T1G

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