IMT17 PNP+PNP复合三极管 -60V -500mA 120~390 SOT-163/SMT6/SC-74 标记T17 用于开关/数字电路
集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| -60V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| -50V 集电极连续输出电流IC Collector CurrentIC| -500mA Q1基极输入电阻R1 Input ResistanceR1| 200MHz Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 120~390 Q1电阻比R1/R2 Q1 Resistance Ratio| -600mV Q2基极输入电阻R1 Input ResistanceR1| 300mW Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2| Features • General Purpose Transistor Isolated Dual Transistors • Two 2SA1036K chips in an SMT package. • Same size as SMT3 package, so same mounting machine can be used for both. • Transistor elements are independent, eliminating interference. • High collector current. IC = –500mA • Mounting cost, and area, are reduced by one half. Q2电阻比R1/R2 Q2 Resistance Ratio| 特点 •通用（隔离双晶体管） •两个2SA1036K芯片在SMT封装。 •SMT3封装尺寸相同，所以相同的安装机器可以同时用于。 •晶体管元素是独立的，消除干扰。 •高集电极电流。 IC=-500毫安的 •安装成本和面积，减少了一半。 直流电流增益hFE DC Current GainhFE| 截止频率fT Transtion FrequencyfT| 耗散功率Pc Power Dissipation| Description & Applications| 描述与应用|