IPB010N06NATMA1

INFINEON  IPB010N06NATMA1  晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0008 ohm, 10 V, 2.8 V

OptiMOS™5 功率 MOSFET

得捷:
MOSFET N-CH 60V 45A/180A TO263-7

欧时:
Infineon OptiMOS 5 系列 Si N沟道 MOSFET IPB010N06NATMA1, 180 A, Vds=60 V, 7引脚 D2PAK TO-263封装

立创商城:
N沟道 60V 180A 45A

e络盟:
功率场效应管, MOSFET, N沟道, 60 V, 180 A, 800 µohm, TO-263 D2PAK, 表面安装

艾睿:
Use Infineon Technologies&s; IPB010N06NATMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 300000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R

TME:
Transistor: N-MOSFET; unipolar; 60V; 180A; 300W; PG-TO263-7

Verical:
Trans MOSFET N-CH 60V 180A 7-Pin6+Tab D2PAK T/R

Newark:
MOSFET Transistor, N Channel, 180 A, 60 V, 0.0008 ohm, 10 V, 2.8 V