Trans IGBT Chip N-CH 600V 120A 600000mW 3Pin3+Tab TO-247AD
IGBT PT 通孔 TO-247（IXXH）
得捷:
IGBT 600V 120A 600W TO247
贸泽:
IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
艾睿:
This fast-switching IXXH50N60B3D1 IGBT transistor from Ixys Corporation will be perfect in your circuit. Its maximum power dissipation is 600000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes xpt technology.
| 型号 | 品牌 | 下载 |
|---|---|---|
| IXXH50N60B3D1 | IXYS Semiconductor | 下载 |
| IXXH60N65B4H1 | IXYS Semiconductor | 下载 |
| IXXH40N65B4 | IXYS Semiconductor | 下载 |
| IXXH80N65B4 | IXYS Semiconductor | 下载 |
| IXXH30N65B4 | IXYS Semiconductor | 下载 |
| IXXH60N65C4 | IXYS Semiconductor | 下载 |
| IXXH75N60C3D1 | IXYS Semiconductor | 下载 |
| IXXH30N60B3 | IXYS Semiconductor | 下载 |
| IXXH75N60C3 | IXYS Semiconductor | 下载 |
| IXXH75N60B3D1 | IXYS Semiconductor | 下载 |
| IXXH30N60C3D1 | IXYS Semiconductor | 下载 |