2N5190G

ON SEMICONDUCTOR  2N5190G  双极晶体管

The Power 4 A, 80 V Bipolar NPN Transistors is for use in power amplifier and switching circuits. This transistor has excellent safe area limits and is a complement to PNP 2N5194, 2N5195

Features

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Pb-Free Packages are Available

得捷:
TRANS NPN 40V 4A TO126

立创商城:
2N5190G

e络盟:
单晶体管 双极, NPN, 40 V, 2 MHz, 40 W, 4 A, 10 hFE

艾睿:
Use this versatile NPN 2N5190G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 40000 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.

安富利:
Trans GP BJT NPN 40V 40A 3-Pin TO-225AA Box

Chip1Stop:
Trans GP BJT NPN 40V 4A 3-Pin TO-225AA Box

Verical:
Trans GP BJT NPN 40V 4A 40000mW 3-Pin3+Tab TO-225 Box

Newark:
# ON SEMICONDUCTOR  2N5190G  Bipolar BJT Single Transistor, General Purpose, NPN, 40 V, 2 MHz, 40 W, 4 A, 2 hFE

罗切斯特:
Trans GP BJT NPN 40V 4A 3-Pin TO-225AA Box