BFR840L3RHESDE6327XTSA1

INFINEON  BFR840L3RHESDE6327XTSA1  晶体管 双极-射频, NPN, 2.25 V, 75 GHz, 75 mW, 35 mA, 150 hFE

RF NPN 2.6V 35mA 75GHz 75mW 表面贴装型 PG-TSLP-3

得捷:
RF TRANS NPN 2.6V 75GHZ TSLP-3

欧时:
INFINEON RF BIP TRANSISTOR BFR840L3RHESD

e络盟:
晶体管 双极-射频, NPN, 2.25 V, 75 GHz, 75 mW, 35 mA, 150 hFE

艾睿:
Look no further than the BFR840L3RHESDE6327XTSA1 RF bi-polar junction transistor, developed by Infineon Technologies, which can offer high radio frequency power compatibility. This RF transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans GP BJT 2.25V 0.035A 3-Pin TSLP T/R

Chip1Stop:
Trans RF BJT 2.25V 0.035A T/R

Newark:
# INFINEON  BFR840L3RHESDE6327XTSA1  Bipolar - RF Transistor, NPN, 2.25 V, 75 GHz, 75 mW, 35 mA, 150

Win Source:
RF TRANS NPN 2.6V 75GHZ TSLP-3 / RF Transistor NPN 2.6V 35mA 75GHz 75mW Surface Mount PG-TSLP-3