TO-92 NPN 25V 0.2A
The NPN general purpose bipolar junction transistor, developed by , is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
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| 2N4117A-E3 | Vishay Semiconductor 威世 | 下载 |
| 2N4118A | Vishay Semiconductor 威世 | 下载 |
| 2N4118A-E3 | Vishay Semiconductor 威世 | 下载 |
| 2N4119A | Vishay Semiconductor 威世 | 下载 |
| 2N4123TF | Fairchild 飞兆/仙童 | 下载 |
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| 2N4123-AP | Micro Commercial Components 美微科 | 下载 |
| 2N4124G | ON Semiconductor 安森美 | 下载 |
| 2N4125BU | Fairchild 飞兆/仙童 | 下载 |