INFINEON IGB15N60T 单晶体管, IGBT, 15 A, 2.05 V, 130 W, 600 V, TO-263, 3 引脚
Summary of Features:
-
.
-
Lowest V cesat drop for lower conduction losses
-
.
-
Low switching losses
-
.
-
Easy parallel switching capability due to positive temperature coefficient in V cesat
-
.
-
Very soft, fast recovery anti-parallel Emitter Controlled Diode
-
.
-
High ruggedness, temperature stable behavior
-
.
-
Low EMI emissions
-
.
-
Low gate charge
-
.
-
Very tight parameter distribution
Benefits:
-
.
-
Highest efficiency – low conduction and switching losses
-
.
-
Comprehensive portfolio in 600V and 1200V for flexibility of design
-
.
-
High device reliability